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| 2SB1101, 2SB1102 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline 2SB1101, 2SB1102 Absolute Maximum Ratings (Ta = 25C) Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature C to E diode forward current Note: 1. Value at TC = 25C. Symbol VCBO VCEO VEBO IC I C(peak) PC * Tj Tstg ID* 1 1 2SB1101 -60 -60 -7 -4 -8 40 150 -55 to +150 4 2SB1102 -80 -80 -7 -4 -8 40 150 -55 to +150 4 Unit V V V A A W C C A Electrical Characteristics (Ta = 25C) 2SB1101 Item Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CEO V(BR)EBO I CBO I CEO DC current tarnsfer ratio hFE Collector to emitter saturation voltage VCE(sat)1 VCE(sat)2 Base to emitter saturation voltage VBE(sat)1 VBE(sat)2 C to E diode forward voltage Turn on time Storage time Fall time Note: 1. Pulse Test. VD t on t stg tf Min -60 -7 -- -- Typ -- -- -- -- Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 3.0 -- -- -- 2SB1102 Min -80 -7 -- -- Typ -- -- -- -- Max -- -- -100 -10 20000 -1.5 -3.0 -2.0 -3.5 3.0 -- -- -- V s V V Unit Test conditions V V A A I C = -25 mA, RBE = I E = -50 mA, IC = 0 VCB = -60 V, IE = 0 VCE = -50 V, RBE = VCE = -3 V, IC = -2 A* 1 I C = -2 A, IB = -4 mA*1 I C = -4 A, IB = -40 mA*1 I C = -2 A, IB = -4 mA*1 I C = -4 A, IB = -40 mA*1 ID = 4 A I C = -2 A, I B1 = -IB2 = -4 mA 1000 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.8 4.0 1.0 1000 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.8 4.0 1.0 2 2SB1101, 2SB1102 3 2SB1101, 2SB1102 4 2SB1101, 2SB1102 5 2SB1101, 2SB1102 When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. 6 |
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